Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT68GA60LD40

IGBT 600V 121A 520W TO-264

10.6

Microsemi Corporation APT68GA60B2D40

IGBT 600V 121A 520W TO-247

10.6

IXYS IXYR50N120C3D1

IGBT 1200V 56A 290W ISOPLUS247

10.59

IXYS IXGH50N120C3

IGBT 1200V 75A 460W TO247

10.55

IXYS IXGH40N120A2

IGBT 1200V 75A 360W TO247

10.5

IXYS IXGH25N160

IGBT 1600V 75A 300W TO247

10.49

IXYS IXGA8N100

IGBT 1000V 16A 54W TO263

10.39

STMicroelectronics STGW35NC120HD

IGBT 1200V 60A 235W TO247

10.37