Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBT16N170AHV

IGBT

11.56

IXYS IXXH100N60C3

IGBT 600V 190A 830W TO247AD

11.4

STMicroelectronics STGWA40M120DF3

IGBT 1200V 80A 468W TO-247-3

0

IXYS IXGR72N60C3D1

IGBT 600V 75A 200W ISOPLUS247

11.23

IXYS IXGP20N100

IGBT 1000V 40A 150W TO220

11.23

Microsemi Corporation APT64GA90LD30

IGBT 900V 117A 500W TO-264

11.21

IXYS IXGK72N60B3H1

IGBT 600V 75A 540W TO264

11.17

IXYS IXGK72N60A3H1

IGBT 600V 75A 540W TO264

11.17