Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKQ120N60TAXKSA1

IGBT 600V TO247-3

11.16

Infineon Technologies SIGC57T120R3LEX1SA3

IGBT 1200V 50A DIE

11.14

IXYS IXXR110N65B4H1

IGBT 650V 150A 455W ISOPLUS247

11.03

IXYS IXGX72N60B3H1

IGBT 600V 75A 540W PLUS247

10.88

IXYS IXGT25N160

IGBT 1600V 75A 300W TO268

10.88

Infineon Technologies IGC50T120T8RQX1SA1

IGBT 1200V 50A DIE

10.79

IXYS IXGX72N60C3H1

IGBT 600V 75A 540W PLUS247

10.78

Microsemi Corporation APT25GP120BG

IGBT 1200V 69A 417W TO247

10.62