Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT25GP90BDQ1G

IGBT 900V 72A 417W TO247

9.73

IXYS IXYJ20N120C3D1

IGBT 1200V 21A 105W TO247

9.71

IXYS IXYA8N250CHV

IGBT

9.71

IXYS IXYT20N120C3D1HV

IGBT

9.62

IXYS IXGK50N60C2D1

IGBT 600V 75A 480W TO264AA

9.58

IXYS IXGK50N60B2D1

IGBT 600V 75A 400W TO264

9.58

IXYS IXGT20N100

IGBT 1000V 40A 150W TO268

9.58

IXYS IXGT16N170

IGBT 1700V 32A 190W TO268

9.58