Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

ON Semiconductor FGH40T120SMDL4

IGBT 1200V 80A 555W TO247-3

8.03

IXYS IXYH50N120C3

IGBT 1200V 100A 750W TO247AD

8.03

IXYS IXGK50N90B2D1

IGBT 900V 75A 400W TO264

7.94

Microsemi Corporation APT54GA60BD30

IGBT 600V 96A 416W TO247

7.99

IXYS IXGT15N120CD1

IGBT 1200V 30A 150W TO268

7.86

IXYS IXDR35N60BD1

IGBT 600V 38A 125W ISOPLUS247

7.84

IXYS IXGQ35N120BD1

IGBT 1200V 75A 400W TO3P

7.77

IXYS IXGT15N120BD1

IGBT 1200V 30A 150W TO268

7.66