Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC20KD

IGBT 600V 16A 60W TO220AB

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IXYS IXGH50N60B

IGBT 600V 75A 300W TO247AD

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IXYS IXGH32N60CD1

IGBT 600V 60A 200W TO247AD

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IXYS IXGH32N60C

IGBT 600V 60A 200W TO247AD

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IXYS IXGH30N60BD1

IGBT 600V 60A 200W TO247

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IXYS IXGH24N60C

IGBT 600V 48A 150W TO247AD

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IXYS IXGH24N60B

IGBT 600V 48A 150W TO247AD

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Infineon Technologies IRG4BC20F

IGBT 600V 16A 60W TO220AB

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