Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC30F

IGBT 600V 31A 100W TO220AB

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Infineon Technologies IRG4BC20UD

IGBT 600V 13A 60W TO220AB

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Infineon Technologies IRG4BC20U

IGBT 600V 13A 60W TO220AB

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IXYS IXGH17N100AU1

IGBT 1000V 34A 150W TO247AD

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IXYS IXGH10N100AU1

IGBT 1000V 20A 100W TO247AD

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IXYS IXGH32N60AU1

IGBT 600V 60A 200W TO247AD

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IXYS IXGH24N60AU1

IGBT 600V 48A 150W TO247AD

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IXYS IXGH32N60B

IGBT 600V 60A 200W TO247AD

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