Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies IRG4BC40W

IGBT 600V 40A 160W TO220AB

0

Infineon Technologies IRG4BC30W

IGBT 600V 23A 100W TO220AB

0

Infineon Technologies IRG4BC20W

IGBT 600V 13A 60W TO220AB

0

Infineon Technologies IRG4PC50U

IGBT 600V 55A 200W TO247AC

0

Infineon Technologies IRG4PC40U

IGBT 600V 40A 160W TO247AC

0

Infineon Technologies IRG4PC40FD

IGBT 600V 49A 160W TO247AC

0

Infineon Technologies IRG4BC40U

IGBT 600V 40A 160W TO220AB

0

Infineon Technologies IRG4BC30U

IGBT 600V 23A 100W TO220AB

0