Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PH40K

IGBT 1200V 30A 160W TO247AC

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Infineon Technologies IRG4PH30KD

IGBT 1200V 20A 100W TO247AC

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Infineon Technologies IRG4PC40K

IGBT 600V 42A 160W TO247AC

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Infineon Technologies IRG4PC40F

IGBT 600V 49A 160W TO247AC

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Infineon Technologies IRG4PC30KD

IGBT 600V 28A 100W TO247AC

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Infineon Technologies 92-0065

IGBT STD 600V 60A TO-220AB

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Infineon Technologies IRG4BC30S

IGBT 600V 34A 100W TO220AB

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Infineon Technologies IRG4BC20S

IGBT 600V 19A 60W TO220AB

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