Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC10K

IGBT 600V 9A 38W TO220AB

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Infineon Technologies IRG4BC20SD

IGBT 600V 19A 60W TO220AB

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Infineon Technologies IRG4IBC30W

IGBT 600V 17A 45W TO220FP

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Infineon Technologies IRG4BC30K

IGBT 600V 28A 100W TO220AB

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Infineon Technologies IRG4BC20K

IGBT 600V 16A 60W TO220AB

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Infineon Technologies IRG4BC10S

IGBT 600V 14A 38W TO220AB

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Infineon Technologies IRG4RC10K

IGBT 600V 9A 38W DPAK

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Infineon Technologies IRG4BH20K-S

IGBT 1200V 11A 60W D2PAK

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