Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PH20KD

IGBT 1200V 11A 60W TO247AC

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Infineon Technologies IRG4IBC30UD

IGBT 600V 17A 45W TO220FP

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Infineon Technologies IRG4IBC30KD

IGBT 600V 17A 45W TO220FP

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Infineon Technologies IRG4IBC30FD

IGBT 600V 20.3A 45W TO220FP

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Infineon Technologies IRG4IBC20KD

IGBT 600V 11.5A 34W TO220FP

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Infineon Technologies IRG4IBC20FD

IGBT 600V 14.3A 34W TO220FP

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Infineon Technologies IRG4IBC10UD

IGBT 600V 6.8A 25W TO220FP

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Infineon Technologies IRG4BC10SD

IGBT 600V 14A 38W TO220AB

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