Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BH20K-L

IGBT 1200V 11A 60W TO262

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Infineon Technologies IRG4BC30U-S

IGBT 600V 23A 100W D2PAK

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Infineon Technologies IRG4BC30K-S

IGBT 600V 28A 100W D2PAK

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Infineon Technologies IRG4BC20SD-S

IGBT 600V 19A 60W D2PAK

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Infineon Technologies IRG4BC20K-S

IGBT 600V 16A 60W D2PAK

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Infineon Technologies IRG4BC20KD-S

IGBT 600V 16A 60W D2PAK

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Infineon Technologies IRG4BC20FD-S

IGBT 600V 16A 60W D2PAK

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Infineon Technologies IRG4PSC71K

IGBT 600V 85A 350W SUPER247

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