Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PH20K

IGBT 1200V 11A 60W TO247AC

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Infineon Technologies IRG4PC50K

IGBT 600V 52A 200W TO247AC

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Infineon Technologies IRG4PC30U

IGBT 600V 23A 100W TO247AC

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Infineon Technologies IRG4PC30S

IGBT 600V 34A 100W TO247AC

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Infineon Technologies IRG4PC30K

IGBT 600V 28A 100W TO247AC

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Infineon Technologies IRG4P254S

IGBT 250V 98A 200W TO247AC

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Infineon Technologies IRG4PSH71KD

IGBT 1200V 78A 350W SUPER247

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Infineon Technologies IRG4PSC71KD

IGBT 600V 85A 350W SUPER247

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