Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4RC10KTR

IGBT 600V 9A 38W DPAK

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Infineon Technologies IRG4RC10KTRL

IGBT 600V 9A 38W DPAK

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Infineon Technologies IRG4PSH71U

IGBT 1200V 99A 350W SUPER247

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Infineon Technologies IRG4PSH71UD

IGBT 1200V 99A 350W SUPER247

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Infineon Technologies IRG4PC20U

IGBT 600V 13A 60W TO247AC

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Infineon Technologies IRG4IBC30S

IGBT 600V 23.5A 45W TO220FP

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Infineon Technologies IRG4BC40W-S

IGBT 600V 40A 160W D2PAK

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Infineon Technologies IRG4BC30W-STRL

IGBT 600V 23A 100W D2PAK

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