Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGS14C40L

IGBT 430V 20A 125W D2PAK

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Infineon Technologies 92-0235

IGBT 430V 20A 125W TO220AB

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Infineon Technologies IRG4BC10SD-L

IGBT 600V 14A 38W TO262

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Infineon Technologies IRG4BC15UD-L

IGBT 600V 14A 49W TO262

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Infineon Technologies IRG4BC15UD-S

IGBT 600V 14A 49W D2PAK

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Infineon Technologies IRG4BC15UD

IGBT 600V 14A 49W TO220AB

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Infineon Technologies IRG4RC20F

IGBT 600V 22A 66W DPAK

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Infineon Technologies IRG4BAC50W-S

IGBT 600V 55A 200W SUPER 220

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