Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC30F-STRR

IGBT 600V 31A 100W D2PAK

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Infineon Technologies IRG4BC30F-STRL

IGBT 600V 31A 100W D2PAK

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Infineon Technologies IRG4BC20UD-STRR

IGBT 600V 13A 60W D2PAK

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Infineon Technologies IRG4BC20UD-STRL

IGBT 600V 13A 60W D2PAK

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Infineon Technologies IRG4BC15UD-STRL

IGBT 600V 14A 49W D2PAK

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Infineon Technologies IRG4BC10SD-S

IGBT 600V 14A 38W D2PAK

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Infineon Technologies IRG4RC10KD

IGBT 600V 9A 38W DPAK

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Infineon Technologies IRG4BC30S-S

IGBT 600V 34A 100W D2PAK

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