Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGF3NB60FD

IGBT 600V 6A 25W TO220FP

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ON Semiconductor ISL9V5036S3S

IGBT 390V 46A 250W TO263AB

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IXYS IXSH40N60A

IGBT 600V 75A 300W TO247AD

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Infineon Technologies IRG4BC30WSTRR

IGBT D2PAK

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Infineon Technologies IRG4RC20FTRR

IGBT 600V 22A 66W DPAK

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Infineon Technologies IRG4RC20FTRL

IGBT 600V 22A 66W DPAK

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Infineon Technologies IRG4RC20FTR

IGBT 600V 22A 66W DPAK

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Infineon Technologies IRG4BC30FD-STRR

IGBT 600V 31A 100W D2PAK

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