Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor NGB15N41CLT4

IGBT 440V 15A 107W D2PAK

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Infineon Technologies IRGB30B60K

IGBT 600V 78A 370W TO220AB

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Infineon Technologies IRG4BC30FD1

IGBT 600V 31A 100W TO220AB

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ON Semiconductor NGD15N41CLT4

IGBT 440V 15A 107W DPAK

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ON Semiconductor MGP15N40CL

IGBT 440V 15A 150W TO220AB

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STMicroelectronics STGW20NB60KD

IGBT 600V 50A 170W TO247

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STMicroelectronics STGP3NB60F

IGBT 600V 6A 68W TO220

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STMicroelectronics STGP3NB60FD

IGBT 600V 6A 68W TO220

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