Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGIB7B60KDPBF

IGBT 600V 12A 39W TO220FP

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Infineon Technologies IRG4BC15MDPBF

IGBT 600V 14A 49W TO220AB

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Infineon Technologies IRGS8B60KPBF

IGBT 600V 28A 167W D2PAK

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Infineon Technologies IRGSL6B60KDPBF

IGBT 600V 13A 90W TO262

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Infineon Technologies IRGS4B60KD1PBF

IGBT 600V 11A 63W D2PAK

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Infineon Technologies IRGB8B60KPBF

IGBT 600V 28A 167W TO220AB

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Infineon Technologies IRGS6B60KPBF

IGBT 600V 13A 90W D2PAK

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Infineon Technologies IRGB4B60KD1PBF

IGBT 600V 11A 63W TO220AB

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