Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies IRG4PC50KPBF

IGBT 600V 52A 200W TO247AC

0

Infineon Technologies IRGP4050PBF

IGBT 250V 104A 330W TO247AC

0

Infineon Technologies IRG4P254SPBF

IGBT 250V 98A 200W TO247AC

0

Infineon Technologies IRG4PC30WPBF

IGBT 600V 23A 100W TO247AC

0

Infineon Technologies IRG4PC20UPBF

IGBT 600V 13A 60W TO247AC

0

Infineon Technologies IRGPS40B120UDP

IGBT 1200V 80A 595W SUPER247

0

Infineon Technologies IRGPS40B120UPBF

IGBT 1200V 80A 595W SUPER247

0

Infineon Technologies IRG4PC50UD-EPBF

IGBT 600V 55A 200W TO247-3

0