Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC10UPBF

IGBT 600V 8.5A 38W TO220AB

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Infineon Technologies IRG4BC10UDPBF

IGBT 600V 8.5A 38W TO220AB

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Infineon Technologies IRG4BC10KPBF

IGBT 600V 9A 38W TO220AB

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Infineon Technologies IRG4BC10SPBF

IGBT 600V 14A 38W TO220AB

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Infineon Technologies IRG4PSH71UPBF

IGBT 1200V 99A 350W SUPER247

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Infineon Technologies IRG4PSH71KPBF

IGBT 1200V 78A 350W SUPER247

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Infineon Technologies IRG4PSC71KPBF

IGBT 600V 85A 350W SUPER247

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Infineon Technologies IRG4PSC71UPBF

IGBT 600V 85A 350W SUPER247

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