Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies IRG4IBC30SPBF

IGBT 600V 23.5A 45W TO220FP

0

Infineon Technologies IRG4BC20MD-SPBF

IGBT 600V 18A 60W D2PAK

0

Infineon Technologies IRG4BC20SD-SPBF

IGBT 600V 19A 60W D2PAK

0

Infineon Technologies IRG4BC20UD-SPBF

IGBT 600V 13A 60W D2PAK

0

Infineon Technologies IRG4BC30W-SPBF

IGBT 600V 23A 100W D2PAK

0

Infineon Technologies IRG4BC30K-SPBF

IGBT 600V 28A 100W D2PAK

0

Infineon Technologies IRG4BC30KPBF

IGBT 600V 28A 100W TO220AB

0

Infineon Technologies IRG4BH20K-LPBF

IGBT 1200V 11A 60W TO262

0