Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor FGB30N6S2D

IGBT 600V 45A 167W TO263AB

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ON Semiconductor FGB20N6S2

IGBT 600V 28A 125W TO263AB

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ON Semiconductor FGB20N6S2D

IGBT 600V 28A 125W TO263AB

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ON Semiconductor FGA40N60UFDTU

IGBT 600V 40A 160W TO3P

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Infineon Technologies IRG4BAC50W-SPBF

IGBT 600V 55A 200W SUPER220

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Infineon Technologies IRG4BC30FD1PBF

IGBT 600V 31A 100W TO220AB

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Infineon Technologies IRG4BC20FD-SPBF

IGBT 600V 16A 60W D2PAK

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Infineon Technologies IRG4BC30F-SPBF

IGBT 600V 31A 100W D2PAK

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