Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor ISL9V5036P3
IGBT 390V 46A 250W TO220AB
0
ON Semiconductor ISL9V2040P3
IGBT 430V 10A 130W TO220AB
0
ON Semiconductor HGTP7N60A4D
IGBT 600V 34A 125W TO220AB
0
ON Semiconductor HGTP12N60A4
IGBT 600V 54A 167W TO220AB
0
ON Semiconductor HGTG7N60A4
IGBT 600V 34A 125W TO247
0
ON Semiconductor HGTG12N60A4
IGBT 600V 54A 167W TO247
0
ON Semiconductor FGP40N6S2
IGBT 600V 75A 290W TO220AB
0
ON Semiconductor FGP30N6S2
IGBT 600V 45A 167W TO220AB
0