Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXSP10N60B2D1

IGBT 600V 20A 100W TO220AB

0

ON Semiconductor ISL9V3040S3S

IGBT 430V 21A 150W TO263AB

0

ON Semiconductor ISL9V3040D3S

IGBT 430V 21A 150W TO252AA

0

ON Semiconductor ISL9V2040S3S

IGBT 430V 10A 130W TO263AB

0

ON Semiconductor ISL9V2040D3S

IGBT 430V 10A 130W TO252AA

0

ON Semiconductor FGB40N6S2

IGBT 600V 75A 290W TO263AB

0

ON Semiconductor FGB30N6S2T

IGBT 600V 45A 167W TO263AB

0

ON Semiconductor ISL9V5036S3

IGBT 390V 46A 250W TO262AA

0