Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor FGP30N6S2D
IGBT 600V 45A 167W TO220AB
0
ON Semiconductor FGP20N6S2
IGBT 600V 28A 125W TO220AB
0
ON Semiconductor FGP20N6S2D
IGBT 600V 28A 125W TO220AB
0
ON Semiconductor FGH60N6S2
IGBT 600V 75A 625W TO247
0
ON Semiconductor FGH50N6S2
IGBT 600V 75A 463W TO247
0
ON Semiconductor FGH40N6S2
IGBT 600V 75A 290W TO247
0
ON Semiconductor FGH40N6S2D
IGBT 600V 75A 290W TO247
0
ON Semiconductor FGH30N6S2
IGBT 600V 45A 167W TO247
0