Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4IBC20WPBF

IGBT 600V 12A 34W TO220FP

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Infineon Technologies IRG4BC10SD-LPBF

IGBT 600V 14A 38W TO262

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Infineon Technologies IRG4BC20K-SPBF

IGBT 600V 16A 60W D2PAK

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Infineon Technologies IRG4BC20F-SPBF

IGBT 600V 16A 60W TO220-3

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Infineon Technologies IRG4BC10SDPBF

IGBT 600V 14A 38W TO220AB

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Infineon Technologies IRG4RC10KPBF

IGBT 600V 9A 38W DPAK

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Infineon Technologies IRG4IBC30FDPBF

IGBT 600V 20.3A 45W TO220FP

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Infineon Technologies IRG4IBC20UDPBF

IGBT 600V 11.4A 34W TO220FP

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