Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXST30N60B2D1

IGBT 600V 48A 250W TO268

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IXYS IXSH30N60B2D1

IGBT 600V 48A 250W TO247

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IXYS IXSQ20N60B2D1

IGBT 600V 35A 190W TO3P

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IXYS IXSH20N60B2D1

IGBT 600V 35A 190W TO247

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IXYS IXSA20N60B2D1

IGBT 600V 35A 190W TO263

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IXYS IXSP20N60B2D1

IGBT 600V 35A 190W TO220

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IXYS IXSH10N60B2D1

IGBT 600V 20A 100W TO247

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IXYS IXSA10N60B2D1

IGBT 600V 20A 100W TO263

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