Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor SGM2N60UFTF

IGBT 600V 2.4A 2.1W SOT-223

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STMicroelectronics STGP7NB60HD

IGBT 600V 14A 80W TO220

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STMicroelectronics STGP3NB60KD

IGBT 600V 10A 50W TO220

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STMicroelectronics STGP3NB60K

IGBT 600V 10A 50W TO220

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STMicroelectronics STGP12NB60KD

IGBT 600V 30A 125W TO220

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STMicroelectronics STGP3NB60HD

IGBT 600V 10A 50W TO220

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STMicroelectronics STGP12NB60K

IGBT 600V 30A 125W TO220

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STMicroelectronics STGP12NB60HD

IGBT 600V 30A 125W TO220

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