Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor SGS13N60UFDTU

IGBT 600V 13A 45W TO220F

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ON Semiconductor SGP5N60RUFDTU

IGBT 600V 8A 60W TO220

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ON Semiconductor HGTP2N120CN

IGBT 1200V 13A 104W TO220AB

0

ON Semiconductor SGS10N60RUFTU

IGBT 600V 16A 55W TO220F

0

ON Semiconductor SGP6N60UFDTU

IGBT 600V 6A 30W TO220

0

ON Semiconductor FGS15N40LTF

IGBT 400V 2W 8SOP

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ON Semiconductor SGR15N40LTF

IGBT 400V 45W DPAK

0

ON Semiconductor SGU15N40LTU

IGBT 400V 45W IPAK

0