Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor SGF23N60UFDM1TU
IGBT 600V 23A 75W TO3PF
0
ON Semiconductor SGF5N150UFTU
IGBT 1500V 10A 62.5W TO3PF
0
ON Semiconductor HGT1S7N60C3DS9A
IGBT 600V 14A 60W TO263AB
0
ON Semiconductor SGF40N60UFTU
IGBT 600V 40A 100W TO3PF
0
ON Semiconductor HGT1S7N60C3DS
IGBT 600V 14A 60W TO263AB
0
ON Semiconductor SGH23N60UFDTU
IGBT 600V 23A 100W TO3P
0
ON Semiconductor SGW23N60UFDTM
IGBT 600V 23A 100W D2PAK
0
ON Semiconductor SGH15N60RUFTU
IGBT 600V 24A 160W TO3P
0