Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor SGS5N150UFTU

IGBT 1500V 10A 50W TO220F

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ON Semiconductor SGW10N60RUFDTM

IGBT 600V 16A 75W D2PAK

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ON Semiconductor SGP40N60UFTU

IGBT 600V 40A 160W TO220

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ON Semiconductor HGT1S2N120CN

IGBT 1200V 13A 104W I2PAK

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ON Semiconductor SGP15N60RUFTU

IGBT 600V 24A 160W TO220

0

ON Semiconductor SGR20N40LTM

IGBT 400V 45W DPAK

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ON Semiconductor SGU20N40LTU

IGBT 400V 45W IPAK

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ON Semiconductor SGR20N40LTF

IGBT 400V 45W DPAK

0