Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor SGH30N60RUFTU

IGBT 600V 48A 235W TO3P

0

ON Semiconductor ISL9V3036P3

IGBT 360V 21A 150W TO220AB

0

ON Semiconductor HGTP12N60C3

IGBT 600V 24A 104W TO220AB

0

ON Semiconductor SGH40N60UFDM1TU

IGBT 600V 40A 160W TO3P

0

ON Semiconductor SGL5N150UFTU

IGBT 1500V 10A 125W TO264

0

ON Semiconductor HGTP7N60C3D

IGBT 600V 14A 60W TO220AB

0

ON Semiconductor ISL9V3036D3ST

IGBT 360V 21A 150W TO252AA

0

ON Semiconductor HGT1S14N36G3VLS

IGBT 390V 18A 100W TO263AB

0