Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor HGTG12N60B3

IGBT 600V 27A 104W TO247

0

ON Semiconductor SGH80N60UFTU

IGBT 600V 80A 195W TO3P

0

ON Semiconductor HGTP7N60B3D

IGBT 600V 14A 60W TO220AB

0

ON Semiconductor FGA15N120ANDTU

IGBT 1200V 24A 200W TO3P

0

ON Semiconductor HGT1S20N35G3VLS

IGBT 380V 20A 150W TO263AB

0

ON Semiconductor HGT1S20N36G3VL

IGBT 395V 37.7A 150W TO262AA

0

ON Semiconductor SGH40N60UFDTU

IGBT 600V 40A 160W TO3P

0

ON Semiconductor ISL9V3036S3S

IGBT 360V 21A 150W TO263AB

0