Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor SGL160N60UFTU
IGBT 600V 160A 250W TO3PF
0
ON Semiconductor SGL40N150DTU
IGBT 1500V 40A 200W TO264
0
ON Semiconductor SGH80N60UFDTU
IGBT 600V 80A 195W TO3P
0
ON Semiconductor SGL60N90DG3YDTU
IGBT 900V 60A 180W TO264
0
ON Semiconductor SGL60N90DG3TU
IGBT 900V 60A 180W TO264
0
ON Semiconductor SGL50N60RUFTU
IGBT 600V 80A 250W TO264
0
ON Semiconductor FGA25N120ANDTU
IGBT 1200V 40A 310W TO3P
0
ON Semiconductor HGTG11N120CN
IGBT 1200V 43A 298W TO247
0