Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


ON Semiconductor ISL9V5045S3S

IGBT 480V 51A 300W D2PAK

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Infineon Technologies IRGP4065DPBF

IGBT 300V 70A 160W TO247AC

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Infineon Technologies IRGP4055DPBF

IGBT 300V 110A 255W TO247AC

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Infineon Technologies IRGS4065PBF

IGBT 300V 70A 178W D2PAK

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Infineon Technologies IRGS4055PBF

IGBT 300V 110A 255W D2PAK

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ON Semiconductor FGPF70N30

IGBT 300V 52W TO220F

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ON Semiconductor HGT1S20N60A4S9A

IGBT 600V 70A 290W TO263AB

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ON Semiconductor FGPF7N60RUFDTU

IGBT 600V 14A 41W TO220F

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