Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT15GP90KG

IGBT 900V 43A 250W TO220

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Microsemi Corporation APT15GP90BG

IGBT 900V 43A 250W TO247

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Microsemi Corporation APT15GP60KG

IGBT 600V 56A 250W TO220

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Microsemi Corporation APT15GN120KG

IGBT 1200V 45A 195W TO220

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Microsemi Corporation APT13GP120KG

IGBT 1200V 41A 250W TO220

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Microsemi Corporation APT11GP60BDQBG

IGBT 600V 41A 187W TO247

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Microsemi Corporation APT11GF120KRG

IGBT 1200V 25A 156W TO220

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Microsemi Corporation APT11GF120BRDQ1G

IGBT 1200V 25A 156W TO247

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