Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor NGD8205NT4
IGBT 390V 20A 125W DPAK
0
ON Semiconductor NGD8201NT4
IGBT 440V 20A 125W DPAK
0
Littelfuse Inc. NGB8206NTF4G
IGBT IGNIT NCHAN 20A 400V D2PAK3
0
ON Semiconductor NGB8206NTF4
IGBT 390V 20A 150W D2PAK3
0
ON Semiconductor NGB8206NT4
IGBT 390V 20A 150W D2PAK
0
ON Semiconductor NGB8206NG
IGBT 390V 20A 150W D2PAK
0
ON Semiconductor NGB8206N
IGBT 390V 20A 150W D2PAK
0
STMicroelectronics STGP30NC60W
IGBT 600V 60A 200W TO220
0