Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor FGPF90N30

IGBT 300V 56.8W TO220F

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ON Semiconductor FGPF30N30

IGBT 300V 46W TO220F

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Microsemi Corporation APT40GP90B2DQ2G

IGBT 900V 101A 543W TMAX

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Microsemi Corporation APT25GP90BG

IGBT 900V 72A 417W TO247

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Microsemi Corporation APT20GT60BRG

IGBT 600V 43A 174W TO247

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Microsemi Corporation APT20GN60BG

IGBT 600V 40A 136W TO247

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Microsemi Corporation APT20GF120BRG

IGBT 1200V 32A 200W TO247

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Microsemi Corporation APT15GT60KRG

IGBT 600V 42A 184W TO220

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