Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGA16N60C2D1

IGBT 600V 40A 150W TO263

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IXYS IXGA16N60C2

IGBT 600V 40A 150W TO263

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IXYS IXGA16N60B2D1

IGBT 600V 40A 150W TO263

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IXYS IXGA16N60B2

IGBT 600V 40A 150W TO263

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IXYS IXER60N120

IGBT 1200V 95A 375W ISOPLUS247

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IXYS IXEH40N120D1

IGBT 1200V 60A 300W TO247AD

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IXYS IXEH40N120

IGBT 1200V 60A 300W TO247AD

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IXYS IXEH25N120D1

IGBT 1200V 36A 200W TO247AD

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