Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH40N60C2

IGBT 600V 75A 300W TO247AD

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IXYS IXGH40N60B2D1

IGBT 600V 75A 300W TO247

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IXYS IXGH40N60B2

IGBT 600V 75A 300W TO247

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IXYS IXGH35N120B

IGBT 1200V 70A 300W TO247

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IXYS IXGH30N60C2D1

IGBT 600V 70A 190W TO247

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IXYS IXGH30N60C2

IGBT 600V 70A 190W TO247

0

IXYS IXGH30N60B2D1

IGBT 600V 70A 190W TO247AD

0

IXYS IXGH30N60B2

IGBT 600V 70A 190W TO247

0