Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK60N60C2D1

IGBT 600V 75A 480W TO264

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IXYS IXGK120N60C2

IGBT 600V 75A 830W TO264

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IXYS IXGJ40N60C2D1

IGBT 600V 75A 300W TO268

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IXYS IXGH60N60C2

IGBT 600V 75A 480W TO247AD

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IXYS IXGH60N60B2

IGBT 600V 75A 500W TO247

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IXYS IXGH50N60C2

IGBT 600V 75A 400W TO247

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IXYS IXGH50N60B2

IGBT 600V 75A 400W TO247

0

IXYS IXGH40N60C2D1

IGBT 600V 75A 300W TO247AD

0