Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGR32N170H1

IGBT 1700V 38A 200W ISOPLUS247

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IXYS IXGR32N170AH1

IGBT 1700V 26A 200W ISOPLUS247

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IXYS IXGR16N170AH1

IGBT 1700V 16A 120W ISOPLUS247

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IXYS IXGR120N60C2

IGBT 600V 75A 300W ISOPLUS247

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IXYS IXGP8N100

IGBT 1000V 16A 54W TO220

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IXYS IXGP7N60CD1

IGBT 600V 14A 75W TO220

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IXYS IXGP7N60C

IGBT 600V 14A 54W TO220

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IXYS IXGP7N60BD1

IGBT 600V 14A 80W TO220

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