Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGT30N60C2

IGBT 600V 70A 190W TO268

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IXYS IXGT30N60B2D1

IGBT 600V 70A 190W TO268

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IXYS IXGT30N60B2

IGBT 600V 70A 190W TO268

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IXYS IXGT16N170AH1

IGBT 1700V 16A 190W TO268

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IXYS IXGR60N60C2D1

IGBT 600V 75A 250W ISOPLUS247

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IXYS IXGR60N60C2

IGBT 600V 75A 250W ISOPLUS247

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IXYS IXGR60N60B2D1

IGBT 600V 75A 250W ISOPLUS247

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IXYS IXGR60N60B2

IGBT 600V 75A 250W ISOPLUS247

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