Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXSA15N120B

IGBT 1200V 30A 150W TO263AA

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IXYS IXRP15N120

IGBT 1200V 25A 300W TO220

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IXYS IXGX60N60C2D1

IGBT 600V 75A 480W PLUS247

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IXYS IXGX60N60B2D1

IGBT 600V 75A 500W PLUS247

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IXYS IXGX50N60C2D1

IGBT 600V 75A 480W TO247

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IXYS IXGX32N170AH1

IGBT 1700V 32A 350W PLUS247

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IXYS IXGT60N60C2

IGBT 600V 75A 480W TO268

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IXYS IXGT60N60B2

IGBT 600V 75A 500W TO268

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