Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXSP15N120B

IGBT 1200V 30A 150W TO220AB

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IXYS IXSK80N60B

IGBT 600V 160A 500W TO264

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IXYS IXSK40N60CD1

IGBT 600V 75A 280W TO264

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IXYS IXSK40N60BD1

IGBT 600V 75A 280W TO264

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IXYS IXSK35N120BD1

IGBT 1200V 70A 300W TO264

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IXYS IXSK30N60CD1

IGBT 600V 55A 200W TO264

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IXYS IXSH50N60B

IGBT 600V 75A 250W TO247

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IXYS IXSH45N120B

IGBT 1200V 75A 300W TO247

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