Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXST40N60B

IGBT 600V 75A 280W TO268

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IXYS IXST35N120B

IGBT 1200V 70A 300W TO268

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IXYS IXST30N60CD1

IGBT 600V 55A 200W TO268

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IXYS IXST30N60C

IGBT 600V 55A 200W TO268

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IXYS IXST30N60BD1

IGBT 600V 55A 200W TO268

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IXYS IXST24N60BD1

IGBT 600V 48A 150W TO268

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IXYS IXST15N120BD1

IGBT 1200V 30A 150W TO268

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IXYS IXSR35N120BD1

IGBT 1200V 70A 250W ISOPLUS247

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