Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXSH45N120

IGBT 1200V 75A 300W TO247AD

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IXYS IXSH45N100

IGBT 1000V 75A 300W TO247

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IXYS IXSH40N60B

IGBT 600V 75A 280W TO247

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IXYS IXSH35N140A

IGBT 1400V 70A 300W TO247

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IXYS IXSH35N120B

IGBT 1200V 70A 300W TO247

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IXYS IXSH30N60BD1

IGBT 600V 55A 200W TO247

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IXYS IXSH15N120BD1

IGBT 1200V 30A 150W TO247

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IXYS IXSH15N120B

IGBT 1200V 30A 150W TO247

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