Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGT60N60

IGBT 600V 75A 300W TO268

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IXYS IXGT50N60B2

IGBT 600V 75A 400W TO268

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IXYS IXGT50N60B

IGBT 600V 75A 300W TO268

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IXYS IXGT40N60C2D1

IGBT 600V 75A 300W TO268

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IXYS IXGT40N60C2

IGBT 600V 75A 300W TO268

0

IXYS IXGT40N60B2D1

IGBT 600V 75A 300W TO268

0

IXYS IXGT40N60B2

IGBT 600V 75A 300W TO268

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IXYS IXGT30N60C2D1

IGBT 600V 70A 190W TO268

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