Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGR50N60C2D1

IGBT 600V 75A 200W ISOPLUS247

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IXYS IXGR50N60C2

IGBT 600V 75A 200W ISOPLUS247

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IXYS IXGR50N60BD1

IGBT 600V 75A 250W ISOPLUS247

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IXYS IXGR40N60C2D1

IGBT 600V 56A 170W ISOPLUS247

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IXYS IXGR40N60C2

IGBT 600V 56A 170W ISOPLUS247

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IXYS IXGR40N60BD1

IGBT 600V 70A 200W ISOPLUS247

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IXYS IXGR40N60B2D1

IGBT 600V 60A 167W ISOPLUS247

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IXYS IXGR40N60B2

IGBT 600V 60A 167W ISOPLUS247

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